发明名称 |
ELECTRIC CHARGE VOLUME EVALUATING DEVICE, ITS MANUFACTURING METHOD, AND METHOD OF EVALUATING ELECTRIC CHARGE VOLUME |
摘要 |
PROBLEM TO BE SOLVED: To provide an electric charge volume evaluating method capable of quantitatively and easily evaluating the electric charge volume of a semiconductor device, and to provide an evaluating wafer used for the method. SOLUTION: An electric charge volume evaluating wafer is equipped with a silicon substrate 1 and a p-type region 6 that is sandwiched between a first silicon oxide film 2 and an SA-NSG film 7 and surrounded with an undoped silicon film 4, and the wafer is subjected to processing that requires an evaluation. Then, the wafer is subjected to etching using a BHF solution, then the etching volume of the p-type region 6 is measured, and the amount of positive electric charge generated by processing in the wafer can be easily quantitatively and easily evaluated. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004193155(A) |
申请公布日期 |
2004.07.08 |
申请号 |
JP20020355560 |
申请日期 |
2002.12.06 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SENGOKU NAOHISA;MATSUMOTO MICHIICHI |
分类号 |
H01L21/66;H01L23/544;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
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