发明名称 ELECTRIC CHARGE VOLUME EVALUATING DEVICE, ITS MANUFACTURING METHOD, AND METHOD OF EVALUATING ELECTRIC CHARGE VOLUME
摘要 PROBLEM TO BE SOLVED: To provide an electric charge volume evaluating method capable of quantitatively and easily evaluating the electric charge volume of a semiconductor device, and to provide an evaluating wafer used for the method. SOLUTION: An electric charge volume evaluating wafer is equipped with a silicon substrate 1 and a p-type region 6 that is sandwiched between a first silicon oxide film 2 and an SA-NSG film 7 and surrounded with an undoped silicon film 4, and the wafer is subjected to processing that requires an evaluation. Then, the wafer is subjected to etching using a BHF solution, then the etching volume of the p-type region 6 is measured, and the amount of positive electric charge generated by processing in the wafer can be easily quantitatively and easily evaluated. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004193155(A) 申请公布日期 2004.07.08
申请号 JP20020355560 申请日期 2002.12.06
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SENGOKU NAOHISA;MATSUMOTO MICHIICHI
分类号 H01L21/66;H01L23/544;(IPC1-7):H01L21/66 主分类号 H01L21/66
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