| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor element formed in a substrate of a three-dimensional profile having a level difference composed of a non-horizontal plane, a horizontal plane and a region coupling the non-horizontal plane and the horizontal plane in which a problem having a serious effect on the characteristic of the semiconductor element, e.g. the lowering of carrier mobility due to the existence of an interface level between the non-horizontal plane and the coupling region or the variation of a threshold voltage is solved. SOLUTION: A silicon oxynitride film containing a rare gas element at a surface density of 10<SP>10</SP>cm<SP>-2</SP>or above is added at least partially to a gate insulating film on a level difference. COPYRIGHT: (C)2004,JPO&NCIPI
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