| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device small in a layout size. <P>SOLUTION: This device is provided with a memory cell array 4000 constituted by arranging a plurality of memory cells 410 in row and column directions. Each of the plurality of memory cells 410 is provided with a source region, a drain region, a select gate 411 and a word gate 412 arranged oppositely to a channel region between the source region and the drain region, and a nonvolatile memory element 413 formed between the word gate 412 and the channel region. A word line driving section 300 has a plurality of unit word line driving sections 310, and each of the plurality of unit word line driving sections 310 drives two word lines 50 connected to the two word gates 412 adjacent to each other in the column direction. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
