发明名称 HOT WIRE CVD SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a thin film deposition system ähot wire CVD (chemical vapor deposition) system} by which unevenness in the film thickness of a thin film to be deposited on a substrate is improved, and the thin film of uniform film thickness is deposited on the surface of the substrate, and to provide a thin film deposition system (hot wire CVD system) by which a film with uniform quality is formed on the surface of a substrate. SOLUTION: As for the hot wire CVD system, a planar gas blowing-out body 43 having a hollow is arranged at the inside of a reaction chamber 40, catalytic bodies 44 are provided so as to be confronted with the main face of the gas blowing-out body 43, a substrate 42 for film deposition is arranged at the outside of the catalytic bodies 44, further, a plurality of gas blowing-out holes 45 are formed on the main face of the gas blowing-out body 43, and, the distribution density of the blowing-out holes 45 is made higher from the central part toward the outer circumferential part in the main face. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004190132(A) 申请公布日期 2004.07.08
申请号 JP20030396321 申请日期 2003.11.26
申请人 KYOCERA CORP 发明人 KAWAKAMI TETSUYA;HAYASHI HIROSHI
分类号 G03G5/08;C23C16/44;C23C16/455;(IPC1-7):C23C16/44 主分类号 G03G5/08
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