发明名称 |
SOLID STATE IMAGING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device which is capable of discharging unwanted charge into an overflow drain even when unwanted charge exceeding the maximum amount of charge to handle is transferred to a horizontal transfer region under a final storage electrode and restraining the unwanted charge from leaking out after the horizontal transfer region adjacent to the final storage electrode. SOLUTION: The horizontal transfer region 4 is tapered (both ends are tapered) so as to improve the charge detection sensitivity of a floating diffusion layer 3 which converts signal charge to voltage signals, and an overflow barrier 5 and the overflow drain 6 are provided adjacent to the final storage electrode 8a of the horizontal transfer region 4 along the shape of the horizontal transfer region 4. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004193834(A) |
申请公布日期 |
2004.07.08 |
申请号 |
JP20020357579 |
申请日期 |
2002.12.10 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MIYASHITA MASAYASU |
分类号 |
H01L29/762;H01L21/339;H01L27/148;H04N5/335;H04N5/353;H04N5/355;H04N5/369;H04N5/3728;(IPC1-7):H04N5/335 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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