发明名称 SOLID STATE IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a solid state imaging device which is capable of discharging unwanted charge into an overflow drain even when unwanted charge exceeding the maximum amount of charge to handle is transferred to a horizontal transfer region under a final storage electrode and restraining the unwanted charge from leaking out after the horizontal transfer region adjacent to the final storage electrode. SOLUTION: The horizontal transfer region 4 is tapered (both ends are tapered) so as to improve the charge detection sensitivity of a floating diffusion layer 3 which converts signal charge to voltage signals, and an overflow barrier 5 and the overflow drain 6 are provided adjacent to the final storage electrode 8a of the horizontal transfer region 4 along the shape of the horizontal transfer region 4. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004193834(A) 申请公布日期 2004.07.08
申请号 JP20020357579 申请日期 2002.12.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIYASHITA MASAYASU
分类号 H01L29/762;H01L21/339;H01L27/148;H04N5/335;H04N5/353;H04N5/355;H04N5/369;H04N5/3728;(IPC1-7):H04N5/335 主分类号 H01L29/762
代理机构 代理人
主权项
地址