METHOD FOR FORMING FLOATING GATE OF FLASH MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a floating gate of a flash memory element, capable of enhancing an operational reliability of the element. SOLUTION: A natural oxide film is decomposed by making SiH4gas flow after forming a first polysilicon film. In an N2annealing process, the decomposed H2gas and O2gas react with N2gas and are outgassed. A second polysilicon film is formed by the flowing SiH4gas and PH3gas to remove the natural oxide film within an interface between the first polysilicon film and the second polysilicon film. COPYRIGHT: (C)2004,JPO&NCIPI