| 摘要 |
PROBLEM TO BE SOLVED: To provide a seed layer being formed as an underlying layer when a copper interconnect line excellent in electromigration resistance is formed in a semiconductor device, e.g. an LSI, and to provide a copper alloy sputtering target required for obtaining the seed layer. SOLUTION: The semiconductor device interconnect line seed layer is composed of a copper alloy having a composition containing Ag:0.05-2 mass%, Fe:0.03-0.4 mass% or Ni:0.035-1.5 mass%, and the remainder of Cu and inevitable impurities, and a copper alloy sputtering target is employed for forming the semiconductor device interconnect line seed layer. Since generation of a void is retarded, the copper alloy sputtering target contributes to accelerate scaling-down of a copper interconnect line pattern in a semiconductor device, e.g. an LSI, and to enhance the yield. Consequently, an excellent effect can be attained in semiconductor device industry. COPYRIGHT: (C)2004,JPO&NCIPI
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