FABRICATION METHOD OF THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

PURPOSE: A fabrication method of a TFT substrate is provided to form a poly silicon-type TFT array substrate by conducting mask processes 6 times with an etch stopper, thereby increasing a throughput and simplifying a fabrication process. CONSTITUTION: A gate electrode(33) is formed in a predetermined area of a substrate(31) where n-type and p-type element areas are defined. A gate insulating film(34), a semiconductor layer(35), and an etch stopper layer(36) are sequentially formed on a front side including the gate electrode(33). The first ion injection masks(37b-37c) and the second ion injection masks are formed on the etch stopper layer(36) to selectively remove the etch stopper layer(36). An n-type impurities area(35a) and a p-type impurities area are formed. The semiconductor layer(35) is selectively removed. Source/drain electrodes are formed in connection with the impurities areas(35a). A pixel electrode is connected to the drain electrode.