发明名称 INPUT DEVICE OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: An input device of a semiconductor memory device is provided to prevent the delay of a high speed signal according to the variation of process, voltage and temperature. CONSTITUTION: An input signal port is comprised in an input port of a semiconductor memory device and receives an input signal. And an input strobe signal port receives an input strobe signal to control the input signal. The configurations of devices comprised in the input signal port and the input strobe signal port are equal each other. The number of logic gates, and the configuration and position of the logic gate, and fan-in and fan-out of each device are equal in the input signal port and the input strobe signal port.
申请公布号 KR20040061270(A) 申请公布日期 2004.07.07
申请号 KR20020087457 申请日期 2002.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, MUN PIL
分类号 G11C7/00;(IPC1-7):G11C7/00 主分类号 G11C7/00
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