| 摘要 |
PURPOSE: A crystallization method of an amorphous silicon layer is provided to form a silicon oxide film on an amorphous silicon layer, and to crystallize the silicon oxide film by a laser, in order to form a polycrystalline silicon layer having an improved surface roughness with large-sized grains, thereby improving electric properties of a TFT. CONSTITUTION: When laser beams are irradiated on an amorphous silicon layer(130), The amorphous silicon layer(130) is melted/coagulated/crystallized, forming a polycrystalline silicon layer(150). A buffer layer(120) and a silicon oxide film(140) are formed in lower/upper parts of the amorphous silicon layer(130). The buffer layer(120) is made of a silicon oxide film as well. The silicon oxide film(140) covers a surface of the amorphous silicon layer(130).
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