METHOD FOR FORMING TRENCH STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a trench structure of a semiconductor device is provided to form the trench structure by using a spin-on glass solution including perhydro silazene. CONSTITUTION: The first layer is formed on a substrate(10). The first layer pattern is formed by patterning the first layer. A field region of the substrate is exposed by forming the first layer pattern. A trench is formed on the substrate by etching the exposed part. An SOG layer for burying the trench is formed by coating an SOG solution including perhydro silazene on the substrate. The first layer pattern is exposed by planarizing the SOG layer. Ions are implanted into the SOG layer by using the first layer pattern as an ion mask. The SOG layer is formed as a silicon oxide layer(18a) by performing a thermal process for the substrate including the SOG layer. The first layer pattern is etched by using an etch ratio of the first layer pattern and the silicon oxide layer.