| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to avoid an increase of a leakage current by controlling a reaction of a HfO2 dielectric layer and a TiN layer in a subsequent heat treatment process, and to easily guarantee capacitance by stably using a high dielectric layer. CONSTITUTION: A storage node made of a TiN layer(10) is formed on an interlayer dielectric formed on a semiconductor substrate. The upper part of the TiN layer is nitridized to form a nitridized TiN layer(12). The nitridized TiN layer is oxidized to form a TiN layer. A HfO2 layer is formed on the oxynitridized TiN layer.
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