| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to prevent a diffusion blocking layer from being oxidized in a subsequent process for forming a dielectric layer by forming a VRuO layer as the diffusion blocking layer on an interface between a storage node contact plug and a lower electrode as a storage node. CONSTITUTION: A diffusion blocking layer(19) is formed on a lower insulation layer(11) having a storage node contact plug(13), made of a VRuO layer that is a ternary amorphous layer. A storage node(21) as a lower electrode, a ferroelectric layer(23) and a plate electrode(25) as an upper electrode are formed on the diffusion blocking layer.
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