发明名称 |
METHOD FOR FORMING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for forming a semiconductor device is provided to make the second insulation layer spacer maintain a large thickness by reducing the height of the second insulation layer spacer in a process for forming the second insulation layer spacer on the sidewall of a bitline so as to shorten an interval of etch time. CONSTITUTION: A conductive interconnection of a stacked structure of a barrier metal layer(37), a conductive layer for a conductive interconnection and a hard mask layer(41) is formed on an underlying structure including silicon. The first insulation layer spacer is formed on the sidewall of the conductive interconnection. The silicon exposed to a gap between the conductive interconnections is epitaxially grown by the thickness of the barrier metal layer. The second insulation layer spacer is formed on the sidewall of the conductive interconnection.
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申请公布号 |
KR20040061279(A) |
申请公布日期 |
2004.07.07 |
申请号 |
KR20020087467 |
申请日期 |
2002.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HYEONG GI;LEE, SEONG JUN |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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