| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing bridge in SAC(Self Aligned Contact) processing. CONSTITUTION: Word lines(10) are formed on a substrate. An oxide layer(30) and a nitride layer(40) are sequentially deposited on the word lines. To improve etching selectivity, the exposed oxide layer are selectively and partially etched, and then a nitride layer(40a) is filled in the etched portion. Then, a landing plug is formed and an SNC(Storage Node Contact) process is performed.
|
