METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to reduce contact resistance by preventing a plug formation material from remaining on an interlayer dielectric and by using aluminum as the plug formation material. CONSTITUTION: The first metal interconnection(602) is formed on a semiconductor substrate(601). An aluminum metal layer(603) and a barrier metal layer(604) are consecutively formed on the first metal interconnection. The aluminum metal layer and the barrier metal layer are sequentially etched to form a plug. An interlayer dielectric is deposited on the substrate including the plug. The interlayer dielectric is planarized to expose the barrier metal layer on the plug. The second metal interconnection is formed on the plug.