| 摘要 |
<p>A mask 100 has a plurality of transmissive regions 102 disposed in a stairstep arrangement. Each transmissive region is separated in a first direction X1 and second perpendicular direction X2 . Each transmissive region 102 comprises a rectangular central portion 106 and first 108a and second 108b side portions adjacent to opposite ends of the central portion 106 in the first direction X1. The side portions may be triangular, semi-circular or semi-ellipse in shape. The mask 100 is disposed over a layer of amorphous silicon on a substrate and irradiated with a laser beam forming a plurality of first irradiated regions on the amorphous silicon layer corresponding to the transmissive regions 102. The mask 100 or substrate is moved such that the first side portion 108a of each transmissive region 102 overlaps the central portion of each first irradiated region. The amorphous silicon layer is irradiated through the mask a second time forming a plurality of second irradiated regions corresponding to the transmissive regions 102.</p> |
