Method for processing heteroepitaxial semiconducting layers on silicon substrates

摘要

Method for treatment of hetero-epitaxial semiconductor layers on a silicon substrate using light radiation. Accordingly the whole surface of the epitaxial layer is acted on with a light pulse of duration 2 to 500 ms with an energy density of 100 to 200 Jmm<-2> with the intensity of the radiation greatest at a wavelength between 400 and 600 nm. The method relates particularly to treatment of 3C-SiC (silicon carbide) layers deposited on a silicon substrate. The coated silicon substrate is preheated to a temperature below its melting point of 1412 oC. A number of light pulses can be used with the time between pulses allowing cooling of the silicon substrate. Thus time between pulses can be between 1 second and 10 minutes.