METHOD AND APPARATUS FOR FORMING BARRIER METAL LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a barrier metal layer of a semiconductor device is provided to control an increase of the whose thickness of a barrier metal layer and prevent the cross section of an interconnection layer from being unnecessarily reduced by making the barrier metal layer formed of a single stack of a TiSiN material. CONSTITUTION: After an interlayer dielectric(12) is formed on a semiconductor substrate(11) in which a contact necessary region is previously defined, the interlayer dielectric is patterned to open the contact necessary region. A series of additive gas and precursor materials are separatively injected into mutually separated upper and lower regions. After a plasma treatment is performed on the additive gas, the plasma-treated additive gas and precursor materials are reacted to form a single TiSiN film that covers the contact necessary region.