| 摘要 |
PURPOSE: A method for forming a transistor of a semiconductor device is provided to prevent a characteristic of a semiconductor device from being deteriorated by a short channel effect and improve the characteristic and reliability of the semiconductor device by making a gate electrode and a source/drain junction region formed of a horizontal structure. CONSTITUTION: A nitride layer pattern exposing a semiconductor substrate(31) in a gate electrode region is formed. The semiconductor substrate is etched to form a trench by using the nitride layer pattern as a mask. The first oxide layer spacer is formed on the sidewall of the trench, and a gate oxide layer(39) is formed on the bottom of the trench. A conductive layer(41) for the gate electrode is formed to fill the trench wherein the upper part of the first oxide layer spacer is exposed. The exposed first oxide layer spacer is removed to form a groove. Impurity ions of a low density are implanted into the surface of the groove. The surfaces of the groove and the conductive layer for the gate electrode are oxidized to form the second oxide layer(47). The nitride layer pattern is eliminated. Impurity ions of a high density are implanted into the semiconductor substrate by using the second oxide layer as an etch barrier, and the source/drain junction region is formed by a drive-in process.
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