METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to avoid a defect caused by a step and prevent a pattern defect by making a storage node formed of a dual cylindrical type and by reducing the height of the storage node while guaranteeing capacitance. CONSTITUTION: An interlayer dielectric(32) is formed on a semiconductor substrate(40). An oxide layer pattern having a contact hole for defining a storage node region is formed on the interlayer dielectric. The first conductive layer is formed on the resultant structure. An insulation spacer is formed on the inner walls of the contact hole of the first conductive layer. The second conductive layer is formed on the resultant structure. The second and first conductive layers are sequentially etched back to form a storage node of a dual cylindrical type composed of the first and second conductive layer patterns in the contact hole.