METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent collapse of a storage node electrode and short between cells by using a plurality of etch stop layers and oxide layers. CONSTITUTION: An interlayer dielectric(42) with contact plugs(44) is formed on a substrate(40). The first etch stop layer(46), the first oxide layer(48), the second etch stop layer(50) and the second oxide layer are sequentially stacked on the interlayer dielectric. Contact holes are formed to define a storage node region by etching the stacked structure. A storage node electrode(60) is formed in the contact holes. The second oxide layer is removed.