| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent damage of a gate electrode on a peripheral region by forming a sacrificial pattern on the peripheral region. CONSTITUTION: A gate oxide layer(14) and a gate electrode(16) with an insulating hard mask(17) are sequentially formed on a substrate(10) defined by a cell and peripheral region. An insulating spacer(18) is formed at both sidewalls of the gate electrode and the hard mask. An interlayer dielectric(20) as an etch object layer is formed on the resultant structure. A sacrificial pattern(30) with low etch rate compared to the etch object layer is selectively formed on the etch object layer of the peripheral region. The etch object layer together with the sacrificial layer is planarized by CMP. A contact hole is then formed by etching the etch object layer. A contact plug is then formed in the contact hole.
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