METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor memory device is provided to be capable of minimizing the oxidation of a storage node contact plug in annealing a dielectric film. CONSTITUTION: Interlayer dielectrics(125,135) with a storage node contact plug(140) are formed on a semiconductor substrate(100). An oxide pillar(150a) is formed on the interlayer dielectric to shield the storage node contact plug. A dielectric film(155) is formed on the interlayer dielectric and the oxide pillar and annealed. An upper electrode and an insulating layer are formed on the dielectric film and selectively etched to expose the oxide pillar. By removing the exposed oxide pillar, the storage node contact plug is exposed. A lower electrode is formed to contact the exposed storage node contact plug.