| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to obtain a uniform active region by rounding uniformly edge portions of an STI(Shallow Trench Isolation). CONSTITUTION: A silicon nitride pattern(14) with a pad oxide layer(12) is formed on a semiconductor substrate(10) to expose an isolation region. A polysilicon spacer(125) is formed at both sidewalls of the silicon nitride pattern. A trench is formed by etching the substrate using the silicon nitride pattern and the polysilicon spacer as a mask. An oxide layer(130) is on the trench by oxidizing the polysilicon spacer and the inner walls of the trench. By removing the oxide layer, the top edge portions of the trench are rounded.
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