| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to be capable of stabilizing threshold voltage of a cell transistor. CONSTITUTION: An active region is defined by forming an isolation layer(20) on a semiconductor substrate(10). The first channel control ions(30) are implanted into the resultant structure. The second channel control ions(50) are implanted into both edges of a drain forming region in the active region. A word line is formed on the active region. A source and drain region are then formed in the substrate.
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