| 摘要 |
PURPOSE: A chemical vapor deposition method is provided to prevent a foreign substance from generating on a deposition film by plasma having high energy when depositing an insulation film on a substrate. CONSTITUTION: When low power is applied and then the first deposition film with a thin thickness is grown on a substrate(35) by plasma particles, the power intensity is increased. High power is applied to the plasma electrode(33), plasma particles having high energy are formed and then the second deposition film is formed by high energy plasma particles. Plasma particles are showered on the substrate(35) by strong electric field formed from the plasma electrode(33) and a susceptor(35) and plasma particles are adhered and deposited to the substrate(35). When the deposition films are formed on the substrate(35), the PECVD(Plasma Enhanced Chemical Vapour Deposition) chamber(100) is turned off. When the first and second deposition films are sequentially formed on the substrate, a small number of foreign substances exist in the second deposition film. Since the foreign substances have a weak adhesion force to the deposition film, they are mostly removed in a cleaning process.
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