METHOD FOR REDUCING CONTACT RESISTANCE OF SELF-ALIGNED BIT LINE USING COBALT-NICKEL ALLOY SILICIDE

摘要

PURPOSE: A method is provided to reduce contact resistance of a self-aligned bit line by removing a native oxide between an LPC(Landing Poly-plug Contact) and a silicon substrate using a Co1-xNixSi2 layer. CONSTITUTION: An insulating layer(4) with a self-aligned bit line contact is formed on a silicon substrate(1). Cobalt and nickel are deposited on the resultant structure including the bit line contact. A Co1-xNixSi2 layer(8) is formed on the exposed silicon substrate in the bit line contact by annealing. The non-reactive cobalt-nickel compound is removed by wet-etching.