METHOD OF MANUFACTURING TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a transistor of a semiconductor device is provided to reduce contact resistance of a gate by forming a thick metal polycide on the gate. CONSTITUTION: A gate with a gate oxide layer is formed on a silicon substrate(11). A source/drain region is formed in the substrate to align the gate by performing ion-implantation. A gate spacer is formed at both sidewalls of the gate. The gate is recessed by etching. A heat-resistant metal substance is deposited on the entire surface of the resultant structure. A metal polycide(18) is formed on the gate and the residues of the heat-resistance metal substance are removed by using desired annealing processes.