METHOD FOR IMPROVING GATE OXIDE LAYER

摘要

PURPOSE: A method for improving a gate oxide layer is provided to control the dangling bond of a silicon substrate by completely removing a chemical oxide layer and a native oxide layer using H2 gas and forming a thermal oxide layer alone on the silicon substrate as the gate oxide layer. CONSTITUTION: A chemical oxide layer is deposited on a silicon substrate(10) while a pre-cleaning process is carried out on the silicon substrate. A native oxide layer is deposited on the chemical oxide layer. The chemical oxide layer and the native oxide layer are vaporized by annealing the resultant structure using H2 gas. A pure thermal oxide layer(50) is formed on the silicon substrate.