| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of effectively preventing bowing when etching a capacitor oxide layer. CONSTITUTION: A semiconductor substrate(10) with isolated storage node contacts(12) through an interlayer dielectric(11) is prepared. The first capacitor oxide layer(14A) is formed on the resultant structure. A groove is formed by selectively etching the first capacitor oxide layer. A nitride layer(16) is formed on the surface of the groove and the first capacitor oxide layer. The second capacitor oxide layer(14B) is then filled in the groove. By blanket etching of the second capacitor oxide layer and the nitride layer, the surface of the first capacitor oxide layer is exposed. A capacitor hole(17) is then formed by etching the first capacitor oxide layer to expose the storage node contact using the nitride layer as an etch barrier layer.
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