METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent a bowing phenomenon of a storage node oxide layer by etching a single material made of only the storage node oxide layer and by opening a region for forming a lower electrode. CONSTITUTION: The first insulation layer is formed on a semiconductor substrate(51). A stacked layer composed of an etch barrier layer and the second insulation layer is formed on the first insulation layer. The stacked layer is etched to form the storage node contact hole. A storage node contact(64) is filled in the storage node contact hole. The second insulation layer is selectively removed from the stacked layer to expose the corner of the sidewall of the storage node contact. A storage node oxide layer is formed on the resultant structure including the storage node contact whose sidewall corner is exposed. The storage node oxide layer is etched to form a lower electrode formation region that opens the storage node contact. A lower electrode(68) is formed in the lower electrode formation region.