| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to effectively prevent a SAC(self-aligned contact) fail by preventing a loss of a hard mask in forming a contact hole by a SAC process. CONSTITUTION: A hard mask made of a dual layer composed of a polysilicon layer and a nitride layer is formed on a semiconductor substrate having the first conductive layer in its upper portion. The first conductive layer is etched to form the first conductive layer pattern by using the hard mask. A spacer is formed to cover the first conductive layer pattern and the hard mask. An interlayer dielectric is formed on the resultant structure. The interlayer dielectric is etched to expose a part of the substrate so that a contact hole is formed. The second conductive layer is formed on the resultant structure to be filled in the contact hole. A blanket-etch process is performed on the second conductive layer to separate the second conductive layers.
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