| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent malfunction and a defect of a device and improve reliability of the device by using an oxide layer in a trench formation region and by easily forming a deep trench having a uniform depth in the entire wafer. CONSTITUTION: A pad oxide layer(11) and a pad nitride layer(12) are sequentially formed on a semiconductor substrate(10). A photoresist pattern is formed on the pad nitride layer. The pad nitride layer and the pad oxide layer are etched to expose a part of the substrate by using the photoresist pattern as an etch mask so as to form an insulation layer pattern(100). Oxygen ions are implanted into the exposed substrate by using the photoresist pattern and the insulation layer pattern as an ion implantation mask so as to form an oxygen ion implantation layer inside the substrate. The photoresist pattern is eliminated. A heat treatment is performed on the substrate to transform the oxygen ion implantation layer into an oxide layer(14A). The substrate is etched to expose the oxide layer by using the insulation layer pattern as an etch mask so as to form a trench(15).
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