METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to maximize the surface area of a polysilicon layer by increasing the roughness of the poly silicon layer. CONSTITUTION: A polysilicon layer as a storage node of a capacitor is deposited on a substrate. A poly grain boundary(10) is selectively and rapidly etched by using chemical etchant of H3PO4 or NC2 and using the etch rate between the poly grain boundary and a poly grain(20). The surface roughness of the polysilicon layer is increased, so that capacitance is increased.