METHOD FOR MANUFACTURING COPPER DIFFUSION BARRIER

摘要

PURPOSE: A method for manufacturing a copper diffusion barrier is provided to effectively prevent copper from diffusing into an unwanted portion by using an Ru/RuxOy/Ru layer as the copper diffusion barrier. CONSTITUTION: An insulating layer(12) is selectively formed on a substrate(10). A first Ru layer(14) is formed on the entire surface of the resultant structure. An oxide layer(16) is formed on the resultant structure. A second Ru layer(18) is formed on the entire surface of the oxide layer. A copper layer(20) is then formed on the entire surface of the resultant structure. A silicon substrate is used as the substrate. The first Ru layer and the second Ru layer are formed as much as 1000 angstrom, or less, by carrying out a sputtering process or a CVD(Chemical Vapor Deposition). The oxide layer is formed by carrying out a plasma treatment using N2O or O2.