| 摘要 |
PURPOSE: A method of manufacturing a capacitor of a semiconductor device is provided to increase capacitance, to stabilize leakage-current properties, and to sustain a desired breakdown voltage by using a stack structure of an HfO2 layer and an HfSiON layer as a dielectric film. CONSTITUTION: A storage node electrode(30) is formed on an interlayer dielectric. A nitride layer and the first HfO2 layer are sequentially formed on the storage node electrode. The nitride layer and the first HfO2 layer are transformed into an HfSiON layer(36) by using annealing. The second HfO2 layer(38) is formed on the HfSiON layer. Then, a plate node electrode(40) is formed on the second HfO2 layer.
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