| 摘要 |
PURPOSE: A method for forming an SAC(Self Aligned Contact) of a semiconductor device is provided to prevent degradation due to over-etch of an etch barrier layer in SAC processing. CONSTITUTION: A conductive line including a polysilicon layer(17) and a hard mask is formed on a substrate(11). A lower insulating layer(25) is formed on the resultant structure. The hard mask is exposed by planarizing the lower insulating layer. The first groove is formed by removing the exposed hard mask to partially remain the hard mask on the polysilicon layer. The second groove is formed by etching the lower insulating layer using the different etching selectivity to the hard mask. A nitride layer(35) is filled in the second groove. An interlayer dielectric is formed on the resultant structure. A contact hole is formed by selectively etching the interlayer dielectric. A landing plug(43) is formed in the contact hole.
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