SEMICONDUCTOR DEVICE WITH PASSIVATION LAYER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve reliability and yield by preventing bubble in a passivation layer. CONSTITUTION: Top metal interconnections(130) are formed on a semiconductor substrate(100). A passivation layer is formed on the top metal interconnections. An oxide spacer(140) is formed at both sidewalls of the top metal interconnections to prevent bubble. The passivation layer is provided with an oxide layer(145) and a silicon nitride layer(150). A TEOS layer is used as the oxide spacer and the oxide layer.