| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce manufacturing cost and time by simplifying contact plug processing. CONSTITUTION: The first interlayer dielectric(22) is formed on a substrate(20) with an active region(21). A lower electrode(24) is formed on the first interlayer dielectric. The second interlayer dielectric(25) is formed on the resultant structure to expose the lower electrode. A dielectric film(26) is formed on the lower electrode and the second interlayer dielectric. An upper electrode(27) is formed on the dielectric film. The third interlayer dielectric(28) is covered on the upper electrode. A contact hole(31) is formed to expose the active region by selectively etching the third, second and first interlayer dielectric and the dielectric film using a metal pattern(29) as a hard mask as a mask. A contact plug is then formed in the contact hole.
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