| 摘要 |
PURPOSE: A TFT(Thin Film Transistor) device for an LCD(Liquid Crystal Display) and a manufacturing method thereof are provided to omit a separate ohmic contact layer material deposition process and a channel forming process by a silicide process, thereby capable of simplifying manufacturing processes. CONSTITUTION: A gate electrode(112) is formed on a substrate(110) by using the first metal material. A gate insulation film(114), an amorphous silicon material layer and a metal layer are sequentially formed on the substrate(110) formed on the gate electrode(112) by using the first insulation material, amorphous silicon material and the second metal material. The metal layer and the amorphous silicon layer are continuously etched by the second mask process. At this time, only metal layer is selectively removed at the channel portion defined as a region corresponding to the center portion of the gate electrode(112). In the channel portion, left and right metal layer patterns are accomplished as source and drain electrodes(120,122), respectively. The amorphous silicon material layer pattern is accomplished as an active layer(117). A silicide is formed at the interfacial surface of the source and drain electrodes(120,122) and the active layer(117) by a silicide process defined as an RTP treatment process by using the source and drain electrodes(120,122) as a mask. The silicide is accomplished as an ohmic contact layer(124).
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