发明名称 VDD detection path in power-up circuit
摘要 A VDD power-up detection circuit is provided having a p-channel transistor having a source coupled to a VDD voltage supply terminal and a gate coupled to a ground supply terminal. A first resistor or a diode element is coupled between the drain of the p-channel transistor and the ground supply terminal. An n-channel transistor has a source coupled to the ground supply terminal and a gate coupled to the drain of the p-channel transistor. A second resistor is coupled between a drain of the n-channel transistor and the VDD voltage supply terminal. A trigger circuit is coupled to the drain of the n-channel transistor. As the VDD supply voltage increases during power-up, the p-channel and n-channel transistors are both turned on. At this time, the trigger circuit asserts a control signal that enables an associated circuit to operate in response to the VDD supply voltage.
申请公布号 US6759852(B1) 申请公布日期 2004.07.06
申请号 US20020253457 申请日期 2002.09.24
申请人 XILINX, INC. 发明人 SAMAD MAHEEN A.
分类号 G01R19/165;H03K17/22;(IPC1-7):G01R31/08;H03K3/02;H03L7/00 主分类号 G01R19/165
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