PEELING METHOD USED FOR FORMING TFTS ON FLEXIBLE FILMS WITH IMPROVED MANUFACTURING YIELD

摘要

PURPOSE: A peeling method is provided to form TFT(Thin Film Transistor)s on a flexible film substrate with increased manufacturing yield thereby implementing the TFT on a curved surface. CONSTITUTION: A metal film(11), a first oxide, and a semiconductor film containing hydrogen are sequentially formed. A support member(10) is bonded to a layer(12) to be peeled containing the first oxide and the semiconductor film and the layer to be peeled is physically separated from a substrate provided with the metal film. A heat treatment is carried out to diffuse hydrogen contained in the semiconductor film. A third oxide is formed by reducing a second oxide formed at a surface boundary between the metal film and the first oxide film. A film containing the second oxide and the third oxide is separated form the metal film. The film containing the second oxide and the third oxide is separated from the first oxide.