| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve process margin between capacitor oxide patterns and to improve capacitance by exactly controlling a major and minor axis of the capacitor oxide pattern. CONSTITUTION: A capacitor oxide layer(41) is formed on a semiconductor substrate(40). The first film is formed on the capacitor oxide layer. Patterns of the first film are formed by patterning the first film using the first mask pattern with the first pitch of the first direction. The second film is covered on the patterns. Spacers(44A) of the second film are formed at both sidewalls of the patterns. The spacers and the patterns are pattered by using the second mask pattern with the second pitch of the second direction, wherein the first pitch is larger than the second pitch. Then, the patterns are selectively removed.
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