Dynamic random access memory (DRAM) based content addressable memory (CAM) cell

摘要

A ternary content addressable memory (CAM) cell includes a dynamic random access memory (DRAM) cell storing data values and a DRAM cell storing mask values. The mask values control a masking circuit. The CAM cell also includes a compare circuit coupled among the DRAM cell and the masking circuit. The compare circuit of an embodiment receives data and comparand data and affects a logical state of a match line in response to a predetermined relationship between the data and comparand data. The compare circuit includes a first pair of transistors coupled for conduction state control by the comparand data and a second pair of transistors coupled for conduction state control by the data. The first pair of transistors includes two n-channel transistors. The second pair of transistors includes one n-channel and one p-channel transistor. A sense amplifier couples to the match line to detect changes in match line logical state.