METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to restrain the formation of an interface oxide layer between a lower electrode and a dielectric film by nitrifying the surface of the lower electrode. CONSTITUTION: A capacitor insulating layer(36) is formed on a semiconductor substrate(30). A capacitor hole is formed by selectively etching the capacitor insulating layer. A lower electrode(38) is formed in the capacitor hole. The surface of the lower electrode is nitrified by using remote plasma. Then, a dielectric film and an upper electrode are sequentially formed on the lower electrode.