METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve leakage current and breakdown voltage without reducing capacitance. CONSTITUTION: A lower electrode(25) made of a conductive silicon layer is formed on a semiconductor substrate(20). By sequentially and alternately oxidizing and nitrifying the conductive silicon layer, the first SiO2 layer(26), the first Si3N4 layer(27), the second SiO2 layer(28) and the second Si3N4 layer(29) are formed on the lower electrode. Then, a dielectric film and an upper electrode are sequentially formed on the resultant structure.