METHOD FOR FORMING GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate of a semiconductor device is provided to simplify the process by omitting a gate spacer forming process. CONSTITUTION: A gate polysilicon layer(102) with a height larger than that of a desired gate electrode is formed on a semiconductor substrate(101). An etching mask with a width larger than that of the desired gate electrode is formed on the gate polysilicon layer. The gate polysilicon layer is formed like a T-shaped pattern by using two-step etching processes. At this time, the pattern has a sidewall spacer region. A source/drain(106) are formed in the substrate to align the pattern. A gate electrode is formed by removing the sidewall spacer region using anisotropic etching. An LDD(Lightly Doped Drain) region is formed in the substrate to align the gate electrode.