发明名称 Method of avoiding dielectric arcing
摘要 A method for reducing electrical charge imbalances in a semiconductor process wafer including providing a semiconductor process wafer including a dielectric insulating layer; exposing the semiconductor process wafer to a semiconductor process whereby an electrical charge imbalance accumulates in charge imbalance portions of the dielectric insulating layer; and, treating the semiconductor process wafer with a controlled atmosphere of treatment gas including at least one of inert gas and hydrogen to reduce an accumulated charge imbalance in the charge imbalance portions.
申请公布号 US6759342(B2) 申请公布日期 2004.07.06
申请号 US20020269219 申请日期 2002.10.11
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 YAO CHIH-HSIANG;LI LAIN-JONG;CHEN BI-TROUG;JAN SYUN-MING
分类号 H01L21/3105;H01L21/311;(IPC1-7):H01L21/302 主分类号 H01L21/3105
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