发明名称 |
Method of avoiding dielectric arcing |
摘要 |
A method for reducing electrical charge imbalances in a semiconductor process wafer including providing a semiconductor process wafer including a dielectric insulating layer; exposing the semiconductor process wafer to a semiconductor process whereby an electrical charge imbalance accumulates in charge imbalance portions of the dielectric insulating layer; and, treating the semiconductor process wafer with a controlled atmosphere of treatment gas including at least one of inert gas and hydrogen to reduce an accumulated charge imbalance in the charge imbalance portions.
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申请公布号 |
US6759342(B2) |
申请公布日期 |
2004.07.06 |
申请号 |
US20020269219 |
申请日期 |
2002.10.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
YAO CHIH-HSIANG;LI LAIN-JONG;CHEN BI-TROUG;JAN SYUN-MING |
分类号 |
H01L21/3105;H01L21/311;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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