发明名称 Non-volatile semiconductor memory device that can be fabricated with erasure unit modified
摘要 Particular blocks are a boot block and parameter block having a storage capacity smaller than that of a general block. In the case where a boot block is not required, a signal BOOTE is set at an L level. In the case where a signal BLKSEL is at an H level in an erasure mode, a control unit selects four blocks aligned in a horizontal direction at the same time. The control unit also selects two blocks simultaneously in the vertical direction. As a result, the particular eight blocks are selected. The boot block and parameter block can be erased collectively as one block having a capacity similar to that of a general block. Therefore, a flash memory corresponding to the case of including a boot block and not including a boot block can be implemented simultaneously with one chip. Thus, the designing and fabrication process can be simplified.
申请公布号 US6760259(B1) 申请公布日期 2004.07.06
申请号 US20030624599 申请日期 2003.07.23
申请人 RENESAS TECHNOLOGY CORP. 发明人 FUTATSUYA TOMOSHI;HAYASAKA TAKASHI;OGURA TAKU
分类号 G11C16/02;G11C16/06;G11C16/08;G11C16/16;G11C16/34;G11C17/00;(IPC1-7):G11C16/16 主分类号 G11C16/02
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